Microstructure and thermoelectric properties of Al-doped ZnO ceramic prepared by spark plasma sintering

The high thermal and low electrical conductivities of ZnO ceramics have hindered their thermoelectric applications. doping with group 3 elements can enhance the properties. In this work, Al (2 at%) doped powder was sintered using spark plasma sintering at varying parameters (such as temperature (550–700 ℃), pressure (250–500 MPa) application (Room Temperature (RT) Holding Time (HT))). Maximum relative density 98.9% achieved a 650 °C 250 MPa, respectively. Al-doped improved in conductivity which caused decrease Seebeck coefficient because increased carrier concentration. reduction grain size due to inhibiting growth effects aluminum lead through phonon scattering boundaries. Hence, ZT 0016 500 obtained. This study indicated that be very °C. These conditions allow retain nanostructure, is beneficial improving